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This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO contribute to its wide acceptance throughout the industry. Avalanche Current? Repetitive Avalanche Energy? Between lead, ——— 6mm 0. S ——— ——— Repetitive rating; pulse width limited by max. See fig. See Figure 12? Typical Output Characteristics Fig 2. Typical Output Characteristics 2. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Maximum Drain Current Vs.
Maximum Avalanche Energy Vs. QG 12V. Basic Gate Charge Waveform Fig 13b. Low Stray Inductance? Ground Plane? Low Leakage Inductance Current Transformer? RG VGS?
IRF4905 MOSFET. Datasheet pdf. Equivalent
IRF MOSFET Power Transistors